[1] Subsiding strain-induced In-Ga intermixing in InAs/InxGa1− xAs sub-monolayer quantum dots for room temperature photodetectors

SR Shriram, R Gourishetty, D Panda, D Das, S Dongre, J Saha, ...

Infrared Physics & Technology 121, 104047 (2022)

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[2] Evaluation of In (Ga) As capping in a multilayer coupled InAs quantum dot system: Growth strategy involving the same overgrowth percentage

R Gourishetty, D Panda, S Dongre, SA Gazi, S Chakrabarti

Journal of Luminescence 239, 118340 (2202)

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[3] Validation of the effects of growth parameter variations on the optical characteristics of InAs QD through Nextnano simulations

S Dongre, D Panda, D Das, SA Gazi, R Kumar, M Biswas, A Mandal, ...

Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices …(2021)

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[4] Hybrid strain-coupled multilayer SK and SML InAs/GaAs quantum dot heterostructure: Enabling higher absorptivity and strain minimization for enhanced optical and structural …

R Gourishetty, D Panda, S Dongre, J Saha, SA Gazi, S Chakrabarti

Journal of Luminescence 233, 117899 (2021)

 

[5] Optimization of vertical strain coupling in InAs/GaAs pip quantum dot infrared photodetectors with applied growth strategy

S Dongre, S Paul, S Mondal, D Panda, SR Shriram, MR Mantri, SA Gazi, ...

Journal of Luminescence 226, 117499 (2020)

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[6] Improved carrier transfer in vertically coupled surface and buried InAs Stranski-Krastanov quantum dot system via ex-situ surface state passivation

MR Mantri, D Panda, D Das, S Mondal, S Paul, SA Gazi, R Kumar, ...

Journal of Luminescence 226, 117470 (2020)

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[7] In-Situ Tailoring of Vertically Coupled InAs pip Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing

S Dongre, S Paul, S Mondal, R Kumar, D Panda, SA Gazi, D Das, ...

ACS Applied Electronic Materials 2 (5), 1243-1253 (2020)

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[8] Investigation of InAs quantum dots grown on the Ge substrate without migration enhance epitaxy layer

R Kumar, D Panda, J Saha, S Dongre, SA Gazi, S Chakrabarti

Nanophotonics VIII 11345, 280-286 (2020)

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[9] Structural, electronic, and optical properties of type II heterostructure based on WS2/black phosphorene

A Kumar, N Pandey, S Dongre, S Chakrabarti

Physics and Simulation of Optoelectronic Devices XXVIII 11274, 253-258 (2020)

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[10] Impact of growth rate variabilities of quantum dots and capping layer on photoluminescence of epitaxially grown inAs quantum dots

MR Mantri, D Panda, SA Gazi, S Dongre, S Chakrabarti

Quantum Dots, Nanostructures, and Quantum Materials: Growth …(2020)

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[11] Optical and structural behaviour of InAs quantum dots grown on the Si substrate without Si-Ge graded layer and without migration enhanced epitaxy layer

R Kumar, D Panda, J Saha, S Dongre, SA Gazi, S Chakrabarti

Quantum Dots, Nanostructures, and Quantum Materials: Growth …(2020)

 

[12] Optimization of strain-coupled InAs QD layers in PiP infrared photodetector heterostructures

S Dongre, D Panda, SA Gazi, D Das, R Kumar, A Kumar, N Pandey, ...

Quantum Dots, Nanostructures, and Quantum Materials: Growth … (2020)

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[13] Investigations on heterogeneously coupled Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot heterostructures with higher (0.1 ML/sec) and lower (0.05 ML/sec) growth rates

S Choudhary, J Saha, D Panda, D Das, S Dongre, S Chakrabarti

Quantum Dots, Nanostructures, and Quantum Materials: Growth … (2020)

 

[14] Enhanced optical performance through growth strategy in coupled InAs PiP QDIPs

S Dongre, D Panda, SA Gazi, D Das, R Kumar, N Pandey, A Kumar, ...

Quantum Dots, Nanostructures, and Quantum Materials: Growth …(2020)

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[15] Submonolayer quantum dots in PiP configuration: study on effects of monolayer coverage and stacking variations

S Dongre, D Panda, SA Gazi, D Das, R Kumar, N Pandey, A Kumar, ...

Quantum Dots, Nanostructures, and Quantum Materials: Growth …(2020)

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[16] Experimental and theoretical investigation of Mn-doped CsPbCl3 with orange light emission

N Pandey, A Kumar, S Dongre, S Chakrabarti

Light-Emitting Devices, Materials, and Applications XXIV 11302, 215-221 (2020)

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[17] Green light emission in CsPbBr3 quantum dots: theoretical and experimental insight

A Kumar, N Pandey, S Dongre, S Chakrabarti

Light-Emitting Devices, Materials, and Applications XXIV 11302, 222-227 (2020)

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[18] The effect of growth rate variation on structural and optical properties of self assembled InAs quantum dots

RA Dahale, A Aanand, SA Gazi, S Dongre, S Paul, S Mondal, A Agarwal, ...

Low-Dimensional Materials and Devices 2019 11085, 111-116 (2019)

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[19] A detailed investigation on the impact of variation in monolayer coverage on optical properties of InAs/GaAs multilayer quantum dot heterostructure

A Patel, D Panda, S Dongre, SA Gazi, D Das, S Chakrabarti

Low-Dimensional Materials and Devices 2019 11085, 117-127 (2019)

 

[20] Effect of substrate temperature variation on the structural and optical properties of self assembled InAs quantum dots

A Aanand, S Dongre, SA Gazi, D Das, D Panda, S Chakrabarti

Low-Dimensional Materials and Devices 2019 11085, 128-135 (2019)

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[21] The effects of V-III ratio on structural and optical properties of self-assembled InAs quantum dots

A Agarwal, A Aanand, SA Gazi, S Dongre, S Paul, S Mondal, RA Dahale, ...

Low-Dimensional Materials and Devices 2019 11085, 102-110 (2019)